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LHF08CTE
Table 3. Bus Operations
10
Mode
Read
Output Disable
Standby
Deep Power-Down
Read Identifier Codes
Write
Notes
1,2,3,8
3
3
4
8
3,6,7,8
RP#
V IH or
V HH
V IH or
V HH
V IH or
V HH
V IL
V IH or
V HH
V IH or
V HH
CE#
V IL
V IL
V IH
X
V IL
V IL
OE#
V IL
V IH
X
X
V IL
V IH
WE#
V IH
V IH
X
X
V IH
V IL
Address
X
X
X
X
See
Figure 4
X
V PP
X
X
X
X
X
X
DQ 0-7
D OUT
High Z
High Z
High Z
Note 5
D IN
RY/BY#
X
X
X
V OH
V OH
X
NOTES:
1. Refer to DC Characteristics. When V PP ≤ V PPLK , memory contents can be read, but not altered.
2. X can be V IL or V IH for control pins and addresses, and V PPLK or V PPH1/2/3 for V PP . See DC Characteristics for
V PPLK and V PPH1/2/3 voltages.
3. RY/BY# is V OL when the WSM is executing internal block erase, byte write, or lock-bit configuration algorithms.
It is V OH during when the WSM is not busy, in block erase suspend mode (with byte write inactive), byte write
suspend mode, or deep power-down mode.
4. RP# at GND ± 0.2V ensures the lowest deep power-down current.
5. See Section 4.2 for read identifier code data.
6. Command writes involving block erase, write, or lock-bit configuration are reliably executed when V PP =V PPH1/2/3
and V CC =V CC2/3/4 . Block erase, byte write, or lock-bit configuration with V CC <3.0V or V IH <RP#<V HH produce
spurious results and should not be attempted.
7. Refer to Table 4 for valid D IN during a write operation.
8. Don’t use the timing both OE# and WE# are V IL .
Rev. 1.3
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